Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance

Investigation of surface recombination is an important area for infrared detectors as the demand smaller pixels increases. In this study, we use transient microwave reflectance to characterize minority carrier lifetime InAsSb nBn structures under three conditions: As-Grown, blanket Barrier-Etched, and SU-8 Passivated barrier-etched. A qualitative comparison these samples shows that decreases Barrier-Etched sample compared As-Grown sample, indicating sensitive changes in surface, specifically introduction states. We compare quantitatively using a polynomial fit (A−1 + Bn Cn2). find = 1.22 ± 0.45 µs, B 2.5 0.2 × 10−12 cm3/s, C 5.004 4.996 10−31 cm6/s, 1.17 0.40 9.9 9.502 9.498 10−30 1.34 5.3 0.5 5.500 4.500 10−33 cm6/s.